Data has the potential to transform the world in ways we're only beginning to imagine, but for data to deliver fully on this promise, new computing architectures are needed. Watch Micron president and CEO, Sanjay Mehrotra, discuss how two key technologies, AI and 5G, are fueling today's data-driven transformation, and how Micron memory and storage are at the heart of new data platform innovations.
Over the next few years, AI will transition from being limited to deployments by cloud leaders to operationalized by 75% of the world’s businesses. See Raj Hazra, senior vice president and general manager Micron Compute and Networking, explain how Micron memory is helping to fuel this tremendous and exciting growth of AI across modern enterprise applications.
Micron delivers the data foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.
Learn more about Micron's data center solutions
Learn how the rise of AI is creating innovation and growth across the data center.
Watch video1 40% improvement in memory density when compared to Micron's previous 1z DRAM node.
2 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
3 33% improvement when compared to Micron’s prior two generations of 3D NAND (96-layer NAND and 128-layer NAND), which featured a maximum of 1,200 MT/s data transfer rates.
Micron’s high-bandwidth, low-power memory and storage provide a critical data foundation for the intelligent edge.
Learn more about Micron's edge solutions for automotive
Learn how digital transformation is driving brilliant new automotive features.
Watch video1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
Micron's high-performance, high-capacity, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled mobile devices.
Learn more about Micron's mobile solutions
1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM.
2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.
Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, agility and security.
Learn more about Micron's client solutions
Learn more about Micron’s new Client SSDs
Learn about the PC innovations providing new life to the devices we use for working, learning and playing.
Watch video1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM.
Micron's 1α node is the world's most advanced DRAM process technology, bringing greater reliability, higher memory density, improved power savings and best-in-class performance for applications across data center, automotive, intelligent edge, mobile and more. This technology also provides a solid foundation for future Micron product and memory innovations.
Micron Delivers Industry’s First 1α DRAM Technology
Inside 1α — the World’s Most Advanced DRAM Process Technology
The most technologically advanced NAND node in the market, Micron's industry-first 176-layer 3D NAND improves both read latency and write latency by over 35%1 and provides 15% faster mixed workload performance2, enabling greater application performance across storage use cases spanning data center, intelligent edge and mobile devices.
Micron Transitions to Next-generation 3D NAND Replacement Gate Technology
1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.
Micron president and CEO, Sanjay Mehrotra, unveiled new memory and storage innovations based on the company's industry-leading 176-layer NAND and 1α (1-alpha) DRAM technology, and introduced the industry’s first Universal Flash Storage (UFS) 3.1 solution for automotive applications. These newest entrants to Micron’s product portfolio deliver on Micron’s vision of accelerating data-driven insights through innovation.
