David Moore, senior vice president and chief strategy officer at Micron, shares Micron's views at Computex 2022 on how new innovations across the data center, the intelligent edge and a broadening array of devices enable the emerging world of rich, pervasive, data-driven experiences. These experiences will transform the way we live and work.
As the largest foreign investor in Taiwan, Micron sustains a significant manufacturing presence and deep engagements with the technology ecosystem. Watch the spotlight from our President and CEO, Sanjay Mehrotra on some of the investments and collaborations that fuel our future growth in the region.
Micron's 1α node is the world's most advanced DRAM process technology, bringing greater reliability, higher memory density, improved power savings and best-in-class performance for applications across data center, automotive, intelligent edge, mobile and more. This technology also provides a solid foundation for future Micron product and memory innovations.
The most technologically advanced NAND node in the market, Micron's industry-first 176-layer 3D NAND improves both read latency and write latency, enabling greater application performance across storage use cases spanning data center, intelligent edge and mobile devices.
Micron delivers the data foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.
1 40% improvement in memory density when compared to Micron's previous 1z DRAM node.
2 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
3 33% improvement when compared to Micron’s prior two generations of 3D NAND (96-layer NAND and 128-layer NAND), which featured a maximum of 1,200 MT/s data transfer rates.
Micron’s high-bandwidth, low-power memory and storage provide a critical data foundation for the intelligent edge.
1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
Micron's high-performance, high-capacity, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled mobile devices.
1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM.
2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.
Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, agility and security.
115% power savings when compared to the previous 1z generation of Micron mobile DRAM.
Industry leaders share insights on emerging technologies and data-driven customer experiences.
Micron’s Koen De Backer shares examples of and benefits derived from smart infrastructure and AR technologies at Micron manufacturing sites.