Micron does more than design and manufacture NAND flash memory. We innovate to solve design challenges through better engineering across a spectrum of NAND products — covering everything from mobile to embedded to data center storage applications.
Introducing the World's First 232-Layer 3D NAND
Micron’s leadership 232-layer 3D NAND provides the foundation for a new wave of end-to-end technology innovation.
Micron set the bar by delivering the world’s-first, 176-layer flash memory. Micron’s innovative replacement-gate design combines charge trap with CMOS-under-array to deliver impressive data transfer rates across a wide array of products.
This tool provides an estimate of NAND current/power consumption per host channel and system NAND power consumption for a NAND Read-Program-Erase-Idle-Standby workload.
